SSM3K341R

MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM3K341R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 � MOSFET (3) 4.0 V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 43 mΩ (typ.) (@VGS = 4 V) 3. Packaging and Pin Assignment SSM3K341R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K341R,LF SSM3K341R,LXGF SSM3K341R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-01 2021-02-03 Rev.8.0 SSM3K341R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 60 V VGSS ±20 Drain current (DC) (Note 1) ID 6 A Drain current (pulsed) (Note 1), (Note 2) IDP 24 Power dissipation (Note 3) PD 1.2 W Power dissipation (t = 10 s) (Note 3) PD 2.4 Single-pulse avalanche energy (Note 4) EAS 28.9 mJ Avalanche current Channel temperature IAR (Note 5) Tch 6 A 175 � Storage temperature (Note 5) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/cur...