N-channel Power MOSFET
STP8N120K5
Datasheet
N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package
TAB
TO-220
1 23
...
Description
STP8N120K5
Datasheet
N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package
TAB
TO-220
1 23
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
VDS
RDS(on) max.
STP8N120K5
1200 V
2.00 Ω
Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
ID 6A
PTOT 130 W
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status link STP8N120K5
Product summary
Order code
STP8N120K5
Marking
8N120K5
Package
TO-220
Packing
Tube
DS12529 - Rev 3 - May 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ra...
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