RFP30P05

RFP30P05 P-CHANNEL POWER MOSFETs FEATURE These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. They are mounted TO-220 package. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS (TC= 25°C) Symbol Ratings Value VDS Drain-Source Voltage (1) -50 VDGR Drain-gate Voltage (RGS= 20kΩ) (1) -50 VGS Gate-Source Voltage ±20 IDS Continuous Drain Current 30 Refer to IDM Pulsed Drain Current (Figure 1) peak current curve RDS(on) Drain-Source on Resistance 0.065 EAS Single pulse Avalanche Rating (Figure 2) Refer to UIS curve PT Power Dissipation at Case Temperature 120 Linear Derating Factor 0.8 TJ Operating Temp...