eat res
■ Darlington Amplifier
A sol te a im m atings
2)
!"#"$%&%# !"##$%&"'()*+$,-"#&*.$ !"##$%&"'(234&&$',-"#&*.$ 234...
eat res
■ Darlington Amplifier
A sol te a im m atings
2)
!"#"$%&%# !"##$%&"'()*+$,-"#&*.$ !"##$%&"'(234&&$',-"#&*.$ 234&&$'()*+$,-"#&*.$ !"##$%&"',!6''$7&,(!"7&476"6+ !"##$%&"',;"<$',=4++4>*&4"7 @A$'3*#,B$+4+&*7%$,C'"3,D67%&4"7,&",:3E4$7& D67%&4"7,@$3>$'*&6'$ J&"'*.$,@$3>$'*&6'$
'($)*+ -!)/ -!2/ -2)/ 8! ;! BFD: @D @+&.
,"+-% 01 01 51 190 011 G5H
(II to +5I1 (II to +5I1
MMBTA14
NPN Transistor
3
1. BASE 2. EMITTER 3. COLLECTOR
./0& :
3? °C/W
°C °C
2
1 SOT-23
lectrical Characteristics (TA=25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
V(BR)CBO V(BR)CEO
IC= 100μA,IE=0 IC= 100 A, IB=0
Emitter-Base Breakdown Voltage Collector Cut-off Current
V(BR)EBO ICBO*
IE= 100 A, IC=0 CB=30 V, IE=0
Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
IEBO* hFE(1) * hFE( ) *
VCE (sat)* VBE (sat) *
EB= 10V ,IC=0 VCE=5V, IC= 10mA VCE=5V, I...