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ALD1101B Dataheets PDF



Part Number ALD1101B
Manufacturers Advanced Linear Devices
Logo Advanced Linear Devices
Description DUAL N-CHANNEL MATCHED MOSFET PAIR
Datasheet ALD1101B DatasheetALD1101B Datasheet (PDF)

ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. The ALD1101 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage a.

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ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. The ALD1101 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used with an ALD1102, a dual CMOS analog switch can be constructed. In addition, the ALD1101 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1101 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000. FEATURES • Low threshold voltage of 0.7V • Low input capacitance • Low Vos grades -- 2mV, 5mV, 10mV • High input impedance -- 1012Ω typical • Negative current (IDS) temperature coefficient • Enhancement-mode (normally off) • DC current gain 109 • RoHS compliant APPLICATIONS • Precision current mirrors • Precision current sources • Analog switches • Choppers • Differential amplifier input stage • Voltage comparator • Data converters • Sample and Hold • Analog inverter PIN CONFIGURATION SOURCE 1 1 8 SUBSTRATE GATE 1 2 DRAIN 1 3 7 SOURCE 2 6 GATE 2 IC 4 5 DRAIN 2 TOP VIEW SAL, PAL, DA PACKAGES * IC pin is internally connected. Do not connect externally. BLOCK DIAGRAM ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) Operating Temperature Range 0°C to +70°C 0°C to +70°C -55°C to +125°C 8-Pin Small Outline Package (SOIC) 8-Pin Plastic Dip Package 8-Pin CERDIP Package ALD1101ASAL ALD1101BSAL ALD1101SAL ALD1101APAL ALD1101BPAL ALD1101PAL ALD1101DA * Contact factory for leaded (non-RoHS) or high temperature versions. GATE 1 (2) DRAIN 1 (3) DRAIN 2 (5) SOURCE 1 (1) SUBSTRATE (8) SOURCE 2 (7) GATE 2 (6) Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range SAL, PALp.


ALD1101A ALD1101B ALD1102


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