BC857S Dual PNP Transistor
Features
■ Dual PNP transistors in one single package ■ No mutual interference between the t...
BC857S Dual
PNP Transistor
Features
■ Dual
PNP transistors in one single package ■ No mutual interference between the
transistors
Absolute Maximum Ratings (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current –Continuous
IC
-0.2 A
Collector Power
Thermal Resistance from Junction to Ambient
PC RθJA
300 mW 417 ℃/W
Junction & Storage Temperature
TSTG
-55 to +150
℃
SOT-363 Schematic Diagram
Electrical Characteristics (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Collector-Base Breakdown Voltage
V(BR)CBO IC= -10µA, IE=0
-50
Collector-Emitter Breakdown Voltage V(BR)CEO IC= -10mA, IB=0
-45
Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency Collector Output Capacitance Noise Figure
V(BR)...
