Document
Features
■ High Breakdown Voltage ■ Low Saturation Voltage ■ RoHS Compliant
Applications
■ High Voltage Control Circuits
GSMMBTA44 NPN Transistor
1. Emitter 2. Base 3. Collector
3
2 1
SOT-23
Absolute Maximum Ratings
(TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC PC PC(TC=25°C) TJ TSTG
Rating
500 400 6.0 300 350 1.5 -55 to +150 -55 to +150
Unit
V V V mA mW W °C °C
Thermal Characteristics
Parameter Thermal Resistance Junction to Ambient
Symbol RθJA
Typ. ---
Max. 357
Unit °C/W
1/4
GSMMBTA44 NPN Transistor
Electrical Characteristics
(TA=25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage
Collector.