BC856S

BC856S Dual PNP Transistor Features ■ Dual PNP transistors in one single package ■ No mutual interference between the transistors Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC RSJA TJ TSTG -80 -65 -5 -0.1 0.2 625 -55 to +150 -55 to +150 V V V A W °C/W °C °C E2 B2 C1 C2 B1 E1 SOT-363 Schematic Diagram Electrical Characteristics (TA = 25 °C unless otherwise noted) Parameter Symbol Test Conditions Min Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth V(BR)CBO V(BR)CEO...