DESCRIPTION
The 2N2222A is silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. It is designed for high s...
DESCRIPTION
The 2N2222A is silicon planar epitaxial
NPN transistors in Jedec TO-18 metal case. It is designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage.
2N2222A
NPN Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Base Votlage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage(IC=0) Collector Current
Total Dissipation
at TA≤25℃
at TC≤25℃
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Operating Temperature
Storage Temperature Range
Symbol VCBO VCEO VEBO IC
Ptot
Rthja Rthjc TJ TSTG
ELECTRICAL CHARACTERISTICS(TC = 25 °C unless otherwise noted)
Parameter
Symbol Test Condition.
Collector Cut-off Current (IE=0)
VCB=60V ICBO
VCB=60V, TC=150°C
Collector Cut-off Current (VBE=-3V)
ICEX
VCE=60V
Base Cut-off Current(VBE=-3V)
IBEX VCE=60V
Emitter Cut-off Current(IC=0)
IEBO VE...
