NPN Transistor. 2N2222A Datasheet

2N2222A Transistor. Datasheet pdf. Equivalent

Part 2N2222A
Description NPN Transistor
Feature DESCRIPTION The 2N2222A is silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. It is.
Manufacture GOOD-ARK
Datasheet
Download 2N2222A Datasheet



2N2222A
DESCRIPTION
The 2N2222A is silicon planar epitaxial NPN transistors
in Jedec TO-18 metal case. It is designed for high speed
switching application at collector current up to 500mA,
and feature useful current gain over a wide range of collector
current, low leakage currents and low saturation voltage.
2N2222A
NPN Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Base Votlage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage(IC=0)
Collector Current
Total Dissipation
at TA25
at TC25
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Operating Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Rthja
Rthjc
TJ
TSTG
ELECTRICAL CHARACTERISTICS(TC = 25 °C unless otherwise noted)
Parameter
Symbol Test Condition.
Collector Cut-off Current (IE=0)
VCB=60V
ICBO
VCB=60V, TC=150°C
Collector Cut-off Current (VBE=-3V)
ICEX
VCE=60V
Base Cut-off Current(VBE=-3V)
IBEX VCE=60V
Emitter Cut-off Current(IC=0)
IEBO VEB=3V
Collector-Base Breakdown Voltage (IE=0) V(BR)CBO*
IC=10u A
Collector-Emitter Breakdown Voltage(IB=0) V(BR)CEO*
IC=10mA
Emitter-Base Breakdown Voltage(IC=0)
V(BR)EBO*
IE=10uA
Collector-Emitter Saturation Voltage
VCE(sat)*
IC=150mA IB=15mA
IC=500mA IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)*
IC=150mA IB=15mA
IC=500mA IB=50mA
IC=0.1mA VCE=10V
IC=1mA VCE=10V
DC Current Gain
IC=10mA VCE=10V
hFE* IC=150mA VCE=10V
IC=500mA VCE=10V
IC=150mA VCE=1V
IC=10mA VCE=10V TA=-55
Small Signal Current Gain
IC=1mA VCE=10V f=1KHz
hfe*
IC=10mA VCE=10V f=1KHz
Rating
75
40
6
800
0.5
1.8
300
83.3
175
-65 ~ 200
Min.
75
40
6
0.6
35
50
75
100
40
50
35
50
75
Max.
10
10
10
20
10
0.3
1
1.2
2
300
300
375
UNIT
V
V
V
mA
W
W
°C/W
°C/W
°C
°C
Unit
nA
uA
nA
nA
nA
V
V
V
V
V
V
V
1/5



2N2222A
ELECTRICAL CHARACTERISTICS(continued)
Parameter
Symbol Test Condition.
Transition Frequency
fT IC=20mA VCE=20V f=100MHz
Emitter Base Capacitance
CEBO
IC=0 VEB=0.5V f=100KHz
Collector Base Capacitance
CCBO
IE=0 VCB=10V f=100KHz
Real Part of Input Impedance
Noise Figure
Input Impedance
Re(hie)
NF
hie
IC=20mA VCE=20V f=300MHz
IC=0.1mA VCE=10V
Rg=1KΩ
f=1KHz
IC=1mA VCE=10V
IC=10mA VCE=10V
Reverse Voltage Ratio
IC=1mA VCE=10V
hre
IC=10mA VCE=10V
Output Admittance
Delay Time
Rise Time
Storage Time
IC=1mA VCE=10V
hoe
IC=10mA VCE=10V
td**
VCC=30V IC=150mA
IB1=15mA VBB=-0.5V
tr**
VCC=30V IC=150mA
IB1=15mA VBB=-0.5V
ts** VCC=30V IC=150mA IB1=-IB2=15mA
Fall Time
tf** VCC=30V IC=150mA IB1=-IB2=15mA
Feedback Time Constant
rbb’ Cd’c IC=20Ma VCE=20V f=31.8MHz
*Pulsed: Pulse duration =300us, duty cycle≤1%
**see test circuit
2N2222A
NPN Transistor
Min.
300
4(Typ.)
2
0.25
5
25
Max.
25
8
60
8
1.25
8
4
35
200
10
25
225
60
150
Unit
MHz
pF
pF
Ω
dB
10-4
10-4
uS
uS
nS
nS
nS
nS
pS
RATINGS AND CHARACTERISTICS CURVES
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