Features
■ Ideal for medium power amplification and switching ■ Complementary PNP MMBT5401
Applications
■ General Purpos...
Features
■ Ideal for medium power amplification and switching ■ Complementary
PNP MMBT5401
Applications
■ General Purpose Amplifier ■ Switching
Absolute Maximum Ratings
(TA=25°C unless otherwise noted） Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation
Thermal Resistance, Junction to Ambient Operating Temperature Storage Temperature Range
Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Symbol VCBO VCEO VEBO IC PC RΘJA TJ TSTG
MMBT5551
NPN Transistor
3
2 1 Package: SOT-23 1. BASE 2. EMITTER 3. COLLECTOR
Value 180 160 6.0 600 300 416
-55 to +150 -55 to +150
Unit V V V mA
mW
°C/W °C °C
1/5
Electrical Characteristics (TA=25°C unless otherwise noted）
Parameter
Symbol Test Conditions
Min
Collector-Base Breakdown Voltage
V(BR)CBO IC=100µA, IE=0
180
Collector-Emitter Breakdown Voltage
V(BR)CEO* IC=1mA, IB=0
160
Emitter-Base Breakdown Voltage Collector Cut-off Current...
