SSFD3912

Main Product Characteristics V(BR)DSS RDS(ON) ID 30V 18mΩ 28A SSFD3912 30V N-Channel MOSFET D S G Features and Benefits TO-252 (DPAK) „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Schematic Diagram Description The SSFD3912 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current – Continuous (TC=25°C) Drain Current – Continuous (TC=100°C) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 28 ID 17.7 IDM 112 EAS 18 IAS 19 Power Dissipation (TC=25°C) Pow...