EPC2115

EPC2115 – Dual 150 V, 5 A Integrated Gate Drivers eGaN® IC Preliminary Datasheet FEATURES: Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply Dual 88-mΩ, 150-V eGaN FET Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm APPLICATIONS: Wireless Power (Highly Resonant and Inductive) High Frequency DC-DC Conversion Schematic Diagram DESCRIPTION The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package. The EPC2115 enables designers to improve efficiency, save space, and lower costs compared to silicon-based solutions. The ultra-low capacitance and zero reverse recovery of the eGaN FETs enable efficient operation in many topologies. The integrated drivers are specifically m...