ALD1110E

ADVANCED LINEAR DEVICES, INC. TM e® EPAD D E L B A N E ALD1108E/ALD1110E QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™) GENERAL DESCRIPTION ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched in threshold voltages and other electrical characteristics. For a given input voltage, the threshold voltage of a MOSFET device determines its drain on-current, resulting in an onresistance characteristic that can be precisely preset and then controlled by the input voltage very accurately. Using an ALD1108E/ALD1110E is simple and straight forward. The MOSFETs function as n-channel MOSFETs, except that all the devices have exceptional matching to each other in electrical characteristics. Since these devices are on the same monolithic chip, they also exhibit excellent tempco matching characteristics. These MOSFET devices have very low input currents, and as a result a very high input impedance (>1012 Ohm). The gate voltage from a control source can drive many MOSFET inputs with practically no loading effects. Used in precision current mirror or current multiplier applications, they can be used to provide a current source over a 100nA to 3mA range, and with either a positive, negative or zero tempco. BENEFITS Precision matched electr...