GS76024AB

GS76024AB BGA Commercial Temp Industrial Temp 256K x 24 6Mb Asynchronous SRAM 8, 10, 12 ns 3.3 V VDD Center VDD and VSS Features Fast access time: 8, 10, 12 ns CMOS low power operation: 260/210/180 mA at minimum cycle time Single 3.3 V ± 0.3V power supply All inputs and outputs are TTL-compatible Fully static operation Industrial Temperature Option: –40 to 85°C Package B: 14 mm x 22 mm, 119-bump, 1.27 mm pitch BGA GB: RoHS-compliant 119-bump BGA available Description The GS76024A is a high speed CMOS static RAM organized as 262,144 words by 24 bits. Static design eliminates the need for external clocks or timing strobes. Operating on a single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS76024A is available in a 119-bump BGA package. 119-bump Ball Grid Array Package Block Diagram A0 A17 CE WE OE Pin Descriptions Symbol A0 to A17 WE CE VDD AdIndpruetss Row Decoder Memory Array Column Decoder Control I/O Buffer DQ1 DQ24...