18Mb Sync Burst SRAMs
GS8161xxD(GT/D)-xxxV
100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp
1M x 18, 512K x 32, 512K x 36 18Mb Sy...
Description
GS8161xxD(GT/D)-xxxV
100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
333 MHz–150 MHz
2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O
Features
IEEE 1149.1 JTAG-compatible Boundary Scan 1.8 V or 2.5 V core power supply 1.8 V or 2.5 V I/O supply LBO pin for Linear or Interleaved Burst mode Internal input resistors on mode pins allow floating mode pins Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle Automatic power-down for portable applications JEDEC-standard 165-bump BGA package RoHS-compliant 100-pin TQFP and 165-bump BGA packages
available
Functional Description
Applications The GS8161xxD(GT/D)-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applicati...
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