18Mb S/DCD Sync Burst SRAMs
Preliminary GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp
1M ...
Description
Preliminary GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp
1M x 18, 512K x 36, 256K x 72 18Mb S/DCD Sync Burst SRAMs
350 MHz–150 MHz 1.8 V VDD 1.8 V I/O
Features
FT pin for user-configurable flow through or pipeline operation Single/Dual Cycle Deselect selectable IEEE 1149.1 JTAG-compatible Boundary Scan ZQ mode pin for user-selectable high/low output drive 1.8 V +10%/–10% core power supply LBO pin for Linear or Interleaved Burst mode Internal input resistors on mode pins allow floating mode pins Default to SCD x18/x36 Interleaved Pipeline mode Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle Automatic power-down for portable applications JEDEC-standard 119-, 165-, and 209-bump BGA package
Functional Description
Applications
The GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit b...
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