GS81320Z36CQ

Preliminary GS81320Z18/36CQ-333M/250M(S/Q/V) GS8680Z18/36CQ-333M/250M(S/Q/V) GS8360Z18/36CQ-333M/250M(S/Q/V) 100-Pin Ceramic QFP Rad-Hard SRAM Military Temp 144Mb/72Mb/36Mb PL/FT Synchronous NBT SRAMs 333 MHz–250 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Aerospace-Level Product NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs 2.5 V or 3.3 V +10%/–10% core power supply 2.5 V or 3.3 V I/O supply User-configurable Pipeline and Flow Through mode LBO pin for Linear or Interleave Burst mode Byte write operation (9-bit Bytes) 3 chip enable signals for easy depth expansion ZZ Pin for automatic power-down 100-pin Ceramic QFP package available Radiation Performance Total Ionizing Dose (TID) > 300krads(Si) Soft Error Rate (SER) = TBR Neutrons = TBR Single Event Latchup Immunity > 80 MeV.cm2/m...