GS816218DD-xxxV

GS816218/36D(B/D)-xxxV 119 & 165 BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs 333 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Features FT pin for user-configurable flow through or pipeline operation Single/Dual Cycle Deselect selectable IEEE 1149.1 JTAG-compatible Boundary Scan ZQ mode pin for user-selectable high/low output drive 1.8 V or 2.5 V core power supply 1.8 V or 2.5 V I/O supply LBO pin for Linear or Interleaved Burst mode Internal input resistors on mode pins allow floating mode pins Default to SCD x18/x36 Interleaved Pipeline mode Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle Automatic power-down for portable applications JEDEC-standard 119- and 165-bump BGA packages RoHS-compliant packages available Functional Description Applications The GS816218/36D-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst add...