Document
GS816218/36D(B/D)-xxxV
119 & 165 BGA Commercial Temp Industrial Temp
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
333 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O
Features
• FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to SCD x18/x36 Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 119- and 165-bump BGA packages • RoHS-compliant packages available
Functional Description
Applications The GS816218/36D-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst add.