GS81280E32GT

GS81280E18/32/36GT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 8M x 18, 4M x 32, 4M x 36 144Mb Sync Burst SRAMs 333 MHz–200 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Features FT pin for user-configurable flow through or pipeline operation Dual Cycle Deselect (DCD) operation 1.8 V or 2.5 V +10%/–10% core power supply 1.8 V or 2.5 V I/O supply LBO pin for Linear or Interleaved Burst mode Internal input resistors on mode pins allow floating mode pins Default to Interleaved Pipeline mode Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle Automatic power-down for portable applications RoHS-compliant 100-lead TQFP package Functional Description Applications The GS81280E18/32/36GT-xxxV is a 150,994,944-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds appli...