GS8160F36DGT

GS8160F18/32/36DGT-6.5/7.5 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 6.5 ns – 7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Flow Through mode operation Single Cycle Deselect (SCD) operation 2.5 V or 3.3 V +10%/–10% core power supply 2.5 V or 3.3 V I/O supply LBO pin for Linear or Interleaved Burst mode Internal input resistors on mode pins allow floating mode pins Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle Automatic power-down for portable applications RoHS-compliant 100-lead TQFP package available Functional Description Applications The GS8160F18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main s...