Document
QJxx16xHx Series
Thyristors
16 Amp High Temperature Alternistor Triacs
RoHS
Agency Approval
Agency
* - L Package only
Main Features
Symbol IT(RMS)
VDRM/ VRRM IGT (Q1)
Agency File Number E71639*
Value 16
400, 600, or 800 10 to 80
Unit A V mA
Schematic Symbol
MT2 MT1 G
Description
This 16A high temperature Alternistor TRIAC, offered in TO-220AB, TO-220 isolated and TO-263 package, has 150°C maximum junction temperature and 200A ITSM(60Hz). This series enables easier thermal management and higher surge handling capability in AC power control applications such as heater control, motor speed control, lighting controls, and static switching relays. Alternistor TRIAC operates in quadrants I, II, & III and offers high performance in applications requiring high commutation capability.
Features & Benefits
• High TJ of 150°C • Voltage capability up to
600V • Surge capability of 200A
at 60Hz half cycle • Mechanically and
thermally robust TO-220 and TO-218 clip-attach assembly
• Internally-isolated TO-220 and TO-218 packages
• Halogen free and RoHS compliant
• Recognized to UL 1557 as an Electrically Isolated Semiconductor Devices
Applications
TRIAC is an excellent AC switch in applications such as heating, lighting, and motor speed controls. Typical applications are - H eater control such as coffee brewer, tankless water
heater and infrared heater - AC solid-state relays - L ight dimmers including incandescent and LED lighting - M otor speed control in kitchen appliances, power tools,
home/brow/white goods and light industrial applications as compressor motor control Alternistor TRIAC is used with high inductive loads requiring the high commutation capability. Internally isolated packages offer better heat sinking with higher isolation voltage.
©2019 Littelfuse, Inc Specifications are subject to change without notice.
Revised: 10/29/19
Thyristors
16 Amp High Temperature Alternistor Triacs
Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)
Symbol
IT(RMS)
RMS on-state current (full sine wave)
ITSM
I2t di/dt
Non repetitive surge peak on-state current (Single half cycle, TJ initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current
IGTM Peak gate trigger current
PG(AV)
Average gate power dissipation
Tstg Storage temperature range
TJ Operating junction temperature range
VDSM/VRSM
Peak non-repetitive blocking voltage
VDSM/VRSM
Peak non-repetitive blocking voltage
xx = voltage/10, y = sensitivity
Parameter
QJxx16LHy QJxx16RHy QJxx16NHy
f = 50Hz
f = 60Hz
f = 60Hz tIpGT≤≤10IGμTsM;
Pulse Width =100μs Pulse Width =100μs
TC = 115 °C TC = 130 °C t = 20 ms t = 16.7 ms tp = 8.3 ms TJ = 150 °C TJ = 150 °C TJ = 150 °C
600V 800V
Value
16
167 200 166 100
2.0
0.5 -40 to 150 -40 to 150 VDRM/VRRM+100 VDRM/VRRM+200
Unit
A
A
A2s A/μs
A W ºC ºC V V
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants)
Symbol IGT VGT VGD IH
dv/dt
(dv/dt)c tgt
Test Condition
VD=12V RL=60Ω VD=VDRM RL=3.3KΩ TJ=150°C
IT=100mA VD=VDRM Gate Open TJ=150°C
VD=2/3VDRM Gate Open TJ=150°C (di/dt)c=8.6A/ms TJ=150°C
IG=2XIGT PW=15s IT=22.6A(pk)
Quadrant
I-II-III
MAX.
I-II-III
MAX.
I-II-III
MIN.
MAX.
600V 800V
MIN.
600V 800V
MIN.
MIN.
TYP,
QJxx16xH2 QJxx16xH3 QJxx16xH4 QJxx16xH5 QJxx16xH6 10 20 35 50 80 1.3 0.15 15 35 50 50 70 - 250 350 - 850 - - 400 600 50 300 400 - 925 - 600 700 800 2 20 25 30 30 33355
Unit mA V V mA
V/μs
V/μs μs
Static Characteristics
Symbol VTM
IDRM / IRRM
Test Conditions
IT = 22.6A tp = 380μs @ VDRM / VRRM
TJ = 25°C TJ = 150°C
MAX MAX
Value 1.60
5 4
Unit V μA mA
Thermal Resistances
Symbol RƟ(J-C)
RƟ(J-A) xx = voltage/10, y = sensitivity
Parameter Junction to case (AC)
Junction to ambient
QJxx16RHy QJxx16NHy QJxx16LHy QJxx16RHy QJxx16NHy QJxx16LHy
Value 0.90 1.8 45 50
Unit °C/W
°C/W
©2019 Littelfuse, Inc Specifications are subject to change without notice.
Revised: 10/29/19
Thyristors
16 Amp High Temperature Alternistor Triacs
Figure 1: D efinition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
MT2 POSITIVE
MT2 (Positive +Half Cycle)
MT2
(-) I GT GATE
-I G T
MT1 REF
MT2
(+) I GT GATE
MT1
QII QI QIII QIV
REF MT2
+ IGT
(-) I GT GATE
(+) I GT GATE
-MT1
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT1 REF
Note: Alternistors will not operate in QIV
Figure 3: N ormalized DC Holding Current vs. Junction Temperature
Ratio of IIH / IIH(TJ = 25ºC)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
-40
-15 10 35 60 85 110 Junction Temperature (TJ) -- ºC
135 150
Average On-State Power Dissipation [PD(AV)] - Watts
Figure 5: P ower Dissipation (Typical) vs. RMS On-State Current
18 16 14 12 10
8 6 4 2 0
0 2 4 6 8 10 12 14 16 18
RMS On-State Current [IT(RMS)] - AMPS
Figure 2: N ormalized DC gate trigger current for Quadrants I, II, and III vs Junction Temperature
Ratio of IGT / IGT (TJ = 25ºC)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0..