Relay Module. G3VM-66M Datasheet

G3VM-66M Module. Datasheet pdf. Equivalent

G3VM-66M Datasheet
Recommendation G3VM-66M Datasheet
Part G3VM-66M
Description MOS FET Relay Module
Feature G3VM-66M; G3VM-66M MOS FET Relay Module MOS FET Relay in module package with SPDT • This model of operated by.
Manufacture OMRON
Datasheet
Download G3VM-66M Datasheet




OMRON G3VM-66M
G3VM-66M
MOS FET Relay Module
MOS FET Relay in module package
with SPDT
• This model of operated by voltage (Rated input voltage is 5 VDC.)
• Contribute to reduce the mounting space on the print circuit board
by small package
• Contact form SPDT
• Load Voltage 60 V
• Surface-mounting
RoHS Compliant
Application Examples
• Semiconductor test equipment
Package
(Unit: mm)
Model Number Legend
11 ±0.3
5±0.3
10±0.3
G3VM-@ @ @
123
1. Load Voltage
6: 60 V
2. Contact form
3. Package
6: SPDT
M: Module
Note: See Device Function Modes
on the page 2.
Ordering Information
Construction
Enclosure rating Contact form
Fully Sealed
SPDT
Rated input voltage
Vcc
5 VDC
VCBIT
5 VDC
Load voltage
(AC peak/DC)
60 V
Note: The AC peak and DC value are given for the load voltage and continuous load current.
Continuous load current
(AC peak/DC)
Ta=25°C
Ta=80°C
400 mA
130 mA
Absolute maximum rating(Ta=25°C)
MODEL
G3VM-66M
Minimum
package
quantity
50 pcs/tube
Item
Input
Rated input voltage
Load voltage (AC peak/DC)
Output Continuous load current (AC peak/DC)
Pulse ON current
Dielectric strength between input / output terminals
Ambient storage temperature
Ambient operating temperature
Ambient operating humidity
Symbol
MIN
VCC MAX
VCBIT
MIN
MAX
VOFF
Io
Iop
VI-O
Tstg
Ta
Rating
4.8
5.2
4.5
5.5
60
400
1,200
500
-30 to 100
-30 to 80
45 to 85
Unit
V
V
V
V
V
mA
mA
Vrms
°C
°C
%
Measurement Connditions
Io (peak)=400 mA
Vcc=5 V, Io=400 mA
Vcc=5 V
Vcc=5 V, t=100 ms, Duty=1/10
50/60 Hz, 1 min
With no icing condensation
With no icing condensation
Electrical characteristics(Ta=25°C)
Item
Input
Input current
ON state resistance of output
Output OFF state Current leakage
OFF state capacitance between output terminals
Capacitance between input / output terminals
Insulation resistance between input / output terminals
Operate time
Release time
Symbol
IINPUT
RON
ILEAK
COFF
CI-O
RI-O
tON
tOFF
Minimum
-
-
-
-
-
500
-
-
Typical
7.3
1
-
20
3.5
-
0.3
0.1
Maximum
15
1.5
2
-
-
-
1
1
Unit
Measurement conditions
mA Vcc=5 V
Ω Vcc=5 V, Io=400 mA
nA Voff=60 V
pF Vs=0 V, f=100 MHz, t<1 s
pF Vs=0 V, f=1 MHz
MΩ VI-O=500 VDC
ms Vcc=5 V, Io=400 mA,
ms Voff=60 V
1



OMRON G3VM-66M
G3VM-66M
MOS FET Relay Module
Engineering Data
Input current vs. Ambient temperature
IINPUT - Ta (Average value)
8.0
Io (peak) = 400 mA
Vcc = 5V DC
7.0
6.0
-40 -20
0 20 40 60 80 100 120
Ambient Temperature Ta (Υ)
On-state resistance vs. Ambient
temperature
Ron - Ta (Average value)
3.0
Io (peak) = 400 mA
2.5 Vcc = 5V DC
2.0
1.5
1.0
0.5
Continuous load current vs.
Ambient Temperature
Output terminal capacitance vs.
Load voltage
Io (peak) - Ta (Peak value)
450
400
350 Vcc=5 V
300
250
200
150
100
50
0
-30 -20 -10 0 10 20 30 40 50 60 70 80 90
Ambient Temperature (Υ)
Current leakage vs. Ambient
temperature
COFF - Voff (peak) (Average value)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
5 10 15 20 25 30 35 40
Load voltage VOFF (V)
100,000
10,000
ILEAK - Ta
Voff (peak)=60 V
(Average value)
1,000
100
10
0.0
-40 -20 0 20 40 60 80 100 120
Ambient Temperature (Υ)
1
-40 -20 0 20 40 60 80 100 120
Ambient Temperature (Υ)
Device Functional Modes *
INPUT
C BIT
PINA
PINB
PINC
HLH
HL L
LLX
* H: 5 V, L: 0 V, X: don’t care
Timing Diagram
VCC
5 µs
VCBIT
90%
5 µs
10%
LOAD
PIND-E
PINF-E
ON OFF
OFF
ON
OFF
OFF
Measurement Circuit
5 µs 1
2
3
6 RL1
5
4 RL2
10%
90%
tOFF
90%
tON
10%
tON tOFF
If the input voltage is applied with sweeping condition to the MOS FET Relay,
both of the output circuits; NO side and NC side will turn ON at the same time.
The rise time of the input voltage must be 5 micro seconds or less, otherwise
malfunction or failure may occur.
2



OMRON G3VM-66M
G3VM-66M
MOS FET Relay Module
Appearance / Terminal Arrangement / Internal Connections
Appearance
Terminal Arrangement/Internal Connections (Top View)
FED
AVcc
FNO
Model name
Pin 1 mark
Lot No.
G3VM-66M
ABC
VCC : 5VDC
CBIT : 5VDC
LOAD : 60Vpeak
Lot No.
MADE IN JAPAN
BGND
Switching
Circuit
ECOM
CCBIT
DNC
The condition of "NO/NC" in this Terminal Arrangement/Internal
Connections (Top View) Input 5V DC between Vcc-Gnd.
Please refer to Timing Diagram on the page 2 for more detail.
Dimensions (Unit: mm)
G3VM-66M 5±0.3
10±0.3
VCC : 5VDC
CBIT : 5VDC
LOAD : 60Vpeak
Lot No.
MADE IN JAPAN
11±0.3
2.54 2.54
1.4±0.1
1.5±0.1
1.5±0.1
2.54±0.1
2.54±0.1
Actual Mounting Pad Dimensions
(Recommended Value, Top View)
3







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