clamped IGBT. STGD20N45LZAG Datasheet

STGD20N45LZAG IGBT. Datasheet pdf. Equivalent

STGD20N45LZAG Datasheet
Recommendation STGD20N45LZAG Datasheet
Part STGD20N45LZAG
Description Automotive-grade 450 V internally clamped IGBT
Feature STGD20N45LZAG; STGB20N45LZAG, STGD20N45LZAG Datasheet Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ .
Manufacture STMicroelectronics
Datasheet
Download STGD20N45LZAG Datasheet




STMicroelectronics STGD20N45LZAG
STGB20N45LZAG,
STGD20N45LZAG
Datasheet
Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ
TAB TAB
2
1
D2PAK
3
23
1
DPAK
C (2 or TAB)
G (1)
RG
RGE
Features
• AEC-Q101 qualified
• SCIS energy of 300 mJ @ TJ = 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Applications
• Automotive ignition coil driver circuit
E (3)
IGBTG1C2TABE3ESD
Product status
STGB20N45LZAG
STGD20N45LZAG
Product summary
Order code
STGB20N45LZAG
Marking
GB20N45LZ
Package
D2PAK
Packing
Tape and reel
Order code
STGD20N45LZAG
Marking
GD20N45LZ
Package
DPAK
Packing
Tape and reel
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology
optimized for coil driving in the harsh environment of automotive ignition systems.
These devices show very low on-state voltage and very high SCIS energy capability
over a wide operating temperature range. Moreover, ESD-protected logic level gate
input and an integrated gate resistor means no external protection circuitry is
required.
DS11362 - Rev 6 - February 2018
For further information contact your local STMicroelectronics sales office.
www.st.com



STMicroelectronics STGD20N45LZAG
STGB20N45LZAG, STGD20N45LZAG
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
VCES(clamped)
V
VECS
Emitter-collector voltage (VGE = 0 V)
20 V
Continuous collector current at TC = 25 °C, VGE = 4 V
IC
Continuous collector current at TC = 100 °C, VGE = 4 V
25 A
25 A
ICP (1)
Pulsed collector current
50 A
VGE Gate-emitter voltage
VGE(clamped)
V
PTOT
Total dissipation at TC = 25 °C
150 W
ESCIS_25 (2)
Self-clamping inductive switching energy
300 mJ
ESCIS_150 (3)
Self-clamping inductive switching energy @ TJ = 150 °C
170 mJ
ESD
Human body model, R = 1.5 kΩ, C = 100 pF
Charged device model
4 kV
2 kV
TSTG
TJ
Storage temperature range
Operating junction temperature range
-55 to 175
°C
1. Pulse width limited by maximum junction temperature.
2. Starting Tj = 25 °C, L = 3 mH, Rg = 1 kΩ, Vcc = 50 V during inductor charging and Vcc = 0 V during the time in clamp. Parts
are 100% electrically tested in production.
3. Starting Tj = 150 °C, L = 3 mH, Rg = 1 kΩ, Vcc = 50 V during inductor charging and Vcc = 0 V during the time in clamp.
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
D²PAK
DPAK
1
62.5 100
Unit
°C/W
°C/W
DS11362 - Rev 6
page 2/20



STMicroelectronics STGD20N45LZAG
STGB20N45LZAG, STGD20N45LZAG
Electrical characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
VCES(clamped)
V(BR)ECS
VGE(clamped)
VCE(sat)
VGE(th)
ICES
IGES
RGE
RG
Parameter
Test conditions
Collector-emitter clamped voltage
Emitter-collector break-down
voltage
IC = 2 mA, VGE = 0 V
IC = 2 mA, VGE = 0 V,
TJ= - 40 °C to 175 °C
IC = 75 mA, VGE = 0 V
Gate-emitter clamped voltage
Collector-emitter saturation
voltage
Gate-threshold voltage
Collector cut-off current
Gate-emitter leakage current
Gate emitter resistance
IG = ±2 mA, TJ= - 40 °C to 175 °C
VGE = 4 V, IC = 6 A
VGE = 4.5 V, IC = 10 A,
TJ = 175 °C
VGE = VCE, IC = 1 mA
VGE = VCE, IC = 1 mA,
TJ = 175 °C
VCE = 15 V, VGE = 0 V,
TJ = 150 °C
VCE = 200 V, VGE = 0 V,
TJ = 150 °C
VGE = ±10 V, VCE = 0 V
VGE = ±10 V, VCE = 0 V,
TJ = -40 °C to 175 °C
Gate resistance
Min.
415
20
12
1.3
450
11
Typ.
450
1.1
1.25
1.7
1.05
625
16
120
Max.
475
16
1.25
1.55
2.1
20
100
900
22
Unit
V
V
V
V
V
V
V
V
µA
µA
µA
µA
Ω
Symbol
Cies
Coes
Cres
Qg
Table 4. Dynamic characteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0 V
VCE = 13 V, IC = 10 A,
VGE = 0 to 5 V
Min.
-
-
-
Typ.
1011
87
14
Max.
-
-
-
Unit
pF
- 26 - nC
DS11362 - Rev 6
page 3/20







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