PIN Photodiode. VEMD5510CF Datasheet

VEMD5510CF Photodiode. Datasheet pdf. Equivalent

VEMD5510CF Datasheet
Recommendation VEMD5510CF Datasheet
Part VEMD5510CF
Description Silicon PIN Photodiode
Feature VEMD5510CF; www.vishay.com VEMD5510CF Vishay Semiconductors Silicon PIN Photodiode DESCRIPTION VEMD5510CF is .
Manufacture Vishay
Datasheet
Download VEMD5510CF Datasheet




Vishay VEMD5510CF
www.vishay.com
VEMD5510CF
Vishay Semiconductors
Silicon PIN Photodiode
DESCRIPTION
VEMD5510CF is a high speed and high sensitive PIN
photodiode. It is a low profile surface-mount device (SMD)
including the chip with a 7.5 mm2 sensitive area detecting
visible light much like the human eye. The diode has its
peak sensitivity at 540 nm and a low capacitance.
FEATURES
• Package type: surface-mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm2): 7.5
• Supression filter for infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Wearables
• Optical heart rate monitoring
• Ambient light sensors
PRODUCT SUMMARY
COMPONENT
VEMD5510CF
Note
• Test conditions see table “Basic Characteristics”
Ira (μA)
0.25
ϕ (°)
± 65
λ0.5 (nm)
440 to 620
ORDERING INFORMATION
ORDERING CODE
VEMD5510CF
VEMD5510CF-GS15
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 5000 pcs, 5000 pcs/reel
PACKAGE FORM
Top view
Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Power dissipation
Tamb 25 °C
VR
PV
Junction temperature
Tj
Operating temperature range
Tamb
Storage temperature range
Tstg
Soldering temperature
According to reflow solder profile Fig. 8
Tsd
Thermal resistance junction-to-ambient
ESD safety HBM
± 2000 V, 1.5 kΩ, 100 pF, 3 pulses
RthJA
ESDHBM
VALUE
20
215
110
-40 to +100
-40 to +100
260
350
2
UNIT
V
mW
°C
°C
°C
°C
K/W
kV
Rev. 1.1, 20-May-2019
1 Document Number: 84387
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VEMD5510CF
www.vishay.com
VEMD5510CF
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 50 mA
VF -
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
20
Reverse dark current
VR = 10 V, E = 0
Iro -
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0 CD -
VR = 3 V, f = 1 MHz, E = 0 CD -
Open circuit voltage
EV = 100 lx, CIE illuminant A
Vo
-
Temperature coefficient of Vo
EV = 100 lx, CIE illuminant A
TKVo
-
Short circuit current
Reverse light current
Angle of half sensitivity
EV = 100 lx, CIE illuminant A
Ee = 0.2 mW/cm2, λ = 525 nm, VR = 5 V
EV = 100 lx, CIE illuminant A, VR = 5 V
Ik
Ira
Ira
ϕ
-
1.35
0.16
-
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
VR = 5 V, RL = 50 Ω, λ = 525 nm
VR = 5 V, RL = 50 Ω, λ = 525 nm
λp
λ0.5
tr
tf
-
-
-
-
TYP.
0.9
-
0.2
80
30
210
-2.3
0.25
2.1
0.25
± 65
540
440 to 620
40
30
MAX.
1.3
-
10
-
40
-
-
-
3.05
0.39
-
-
-
-
-
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
μA
μA
°
nm
nm
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
1000
100
VR = 10 V
10
1
10
VR = 5 V, CIE illuminant A
1
0.1
0.1
0
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
0.01
10
100
EV - Illuminance (lx)
1000
Fig. 2 - Reverse Light Current vs. Irradiance
Rev. 1.1, 20-May-2019
2 Document Number: 84387
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VEMD5510CF
www.vishay.com
10
1000 lx
500 lx
1 250 lx
100 lx
50 lx
0.1 25 lx
EV (lx), CIE illuminant A
0.01
0246
8
10 lx
10 12
VR - Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Reverse Voltage
90
80
70
60
50
40
30
20
10
0
0.001
f = 1 MHz, E = 0
0.01 0.1
1
VR - Reverse Voltage (V)
10
Fig. 4 - Diode Capacitance vs. Reverse Voltage
VEMD5510CF
Vishay Semiconductors
100
90
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900 1000 1100
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
1.0
0.9
0.8
0.7
0.6 0.4 0.2 0
40°
50°
60°
70°
80°
Fig. 6 - Relative Sensitivity vs. Angular Displacement
Rev. 1.1, 20-May-2019
3 Document Number: 84387
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)