Trench MOSFET. PMCM6501UNE Datasheet

PMCM6501UNE MOSFET. Datasheet pdf. Equivalent

PMCM6501UNE Datasheet
Recommendation PMCM6501UNE Datasheet
Part PMCM6501UNE
Description N-channel Trench MOSFET
Feature PMCM6501UNE; PMCM6501UNE 20 V, N-channel Trench MOSFET 30 May 2017 Product data sheet 1. General description N-.
Manufacture nexperia
Datasheet
Download PMCM6501UNE Datasheet




nexperia PMCM6501UNE
PMCM6501UNE
20 V, N-channel Trench MOSFET
30 May 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size
Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Ultra small package: 0.98 × 1.48 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 - 8 V
[1] - - 8.7 A
- 17 21 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2



nexperia PMCM6501UNE
Nexperia
PMCM6501UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
A1 G
gate
A2 S
source
B1 S
source
B2 S
source
C1 D
drain
C2 D
drain
Simplified outline
12
A
B
C
Graphic symbol
D
G
Transparent top view
WLCSP6 (WLCSP6_3-2)
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM6501UNE
WLCSP6
Description
wafer level chip-size package; 6 bumps (3 x 2)
Version
WLCSP6_3-2
7. Marking
Table 4. Marking codes
Type number
PMCM6501UNE
Marking code
AE
PIN A1
INDICATION
2
1
Fig. 1. WLCSP6 marking code description
AB
Top view, balls down
C
MARKING CODE
(EXAMPLE)
aaa-013901
PMCM6501UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 May 2017
© Nexperia B.V. 2017. All rights reserved
2 / 15



nexperia PMCM6501UNE
Nexperia
PMCM6501UNE
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
drain-source voltage
Tj = 25 °C
-
VGS gate-source voltage
-8
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
[1] -
VGS = 4.5 V; Tamb = 25 °C
[1] -
VGS = 4.5 V; Tamb = 100 °C
[1] -
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
Ptot total power dissipation Tamb = 25 °C
[2] -
[1] -
Tsp = 25 °C
-
Tj junction temperature
-55
Tamb
ambient temperature
-55
Tstg storage temperature
-65
Source Drain Diode
IS
source current
Tamb = 25 °C
[1] -
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Max
20
8
8.7
6.6
4.2
27
556
1.3
12.5
150
150
150
1.2
Unit
V
V
A
A
A
A
mW
W
W
°C
°C
°C
A
120
017aaa123
120
017aaa124
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
PMCM6501UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 May 2017
© Nexperia B.V. 2017. All rights reserved
3 / 15







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