LDMOS Transistors. MRF13750HS Datasheet

MRF13750HS Transistors. Datasheet pdf. Equivalent

MRF13750HS Datasheet
Recommendation MRF13750HS Datasheet
Part MRF13750HS
Description RF Power LDMOS Transistors
Feature MRF13750HS; NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral M.
Manufacture NXP
Datasheet
Download MRF13750HS Datasheet




NXP MRF13750HS
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed for industrial, scientific and
medical (ISM) applications in the 700 to 1300 MHz frequency range. The
transistors are capable of CW or pulse power in narrowband operation.
Typical Performance: VDD = 50 Vdc
Frequency
(MHz)
Signal Type
915 (1)
CW
915 (2)
Pulse
(100 sec, 10% Duty Cycle)
1300 (3)
CW
Pout
(W)
750
850
700
Gps
(dB)
19.3
20.5
17.2
D
(%)
67.1
69.2
56.0
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
915 (2)
Pulse
(100 sec, 10%
Duty Cycle)
> 10:1 at all
Phase
Angles
Pin
(W)
15.9 Peak
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
1. Measured in 915 MHz narrowband reference circuit (page 5).
2. Measured in 915 MHz narrowband production test fixture (page 11).
3. Measured in 1300 MHz narrowband reference circuit (page 8).
Features
Internally input pre--matched for ease of use
Device can be used single--ended or in a push--pull configuration
Characterized for 30 to 50 V
Suitable for linear applications with appropriate biasing
Integrated ESD protection
Recommended driver: MRFE6VS25GN (25 W)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
915 MHz industrial heating/welding systems
1300 MHz particle accelerators
Document Number: MRF13750H
Rev. 1, 01/2018
MRF13750H
MRF13750HS
700–1300 MHz, 750 W CW, 50 V
RF POWER LDMOS TRANSISTORS
NI--1230H--4S
MRF13750H
NI--1230S--4S
MRF13750HS
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017–2018 NXP B.V.
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
1



NXP MRF13750HS
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
VDSS
VGS
VDD
Tstg
TC
TJ
PD
–0.5, +105
–6.0, +10
55, +0
–65 to +150
–40 to +150
–40 to +225
1333
6.67
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 82C, 700 W CW, 50 Vdc, IDQ(A+B) = 150 mA, 915 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 76C, 850 W Peak, 100 sec Pulse Width,
10% Duty Cycle, 50 Vdc, IDQ(A+B) = 200 mA, 915 MHz
Table 3. ESD Protection Characteristics
Symbol
RJC
ZJC
Value (2,3)
0.15
0.014
Unit
C/W
C/W
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Charge Device Model (per JESD22--C101)
C3, passes 1200 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics (4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
Zero Gate Voltage Drain Leakage Current
(VDS = 55 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 105 Vdc, VGS = 0 Vdc)
IGSS
V(BR)DSS
IDSS
IDSS
105
1 Adc
— Vdc
1 Adc
10 Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 275 Adc)
VGS(th)
1.3
1.72
2.3
Vdc
Gate Quiescent Voltage
VGS(Q)
1.7
2.2
2.7
Vdc
(VDD = 50 Vdc, IDQ(A+B) = 200 mAdc, Measured in Functional Test)
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 2.8 Adc)
VDS(on)
0.1
0.23
0.6
Vdc
Dynamic Characteristics (4,5)
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.94 —
pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 63.8 —
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
5. Part internally input pre--matched.
(continued)
MRF13750H MRF13750HS
2
RF Device Data
NXP Semiconductors



NXP MRF13750HS
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max Unit
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 200 mA, Pout = 850 W Peak
(85 W Avg.), f = 915 MHz, 100 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps 19.5 20.5 21.5 dB
Drain Efficiency
D 66.0 69.2 —
%
Table 5. Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 200 mA
Frequency
(MHz)
915
Signal Type
Pulse
(100 sec, 10% Duty Cycle)
VSWR
> 10:1 at all
Phase Angles
Pin
(W)
15.9 Peak
(3 dB Overdrive)
Test Voltage, VDD
50
Result
No Device Degradation
Table 6. Ordering Information
Device
Tape and Reel Information
Package
MRF13750HR5
MRF13750HSR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--1230H--4S
NI--1230S--4S
RF Device Data
NXP Semiconductors
MRF13750H MRF13750HS
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)