Diac. SMDB3 Datasheet

SMDB3 Diac. Datasheet pdf. Equivalent

SMDB3 Datasheet
Recommendation SMDB3 Datasheet
Part SMDB3
Description Diac
Feature SMDB3; DB3, DB4, SMDB3 Datasheet Diac DO-35 2 3 1 SOT-23 Pin 1 and 3 must be shorted together Features • .
Manufacture STMicroelectronics
Datasheet
Download SMDB3 Datasheet




STMicroelectronics SMDB3
DB3, DB4, SMDB3
Datasheet
Diac
DO-35
2
3
1
SOT-23
Pin 1 and 3 must be shorted
together
Features
• VBO : 32 V and 40 V
• Low breakover current
• Breakover voltage symmetry : 3V
• ECOPACK®2 compliant
Applications
• Triggering device for Triac or SCR based motor / light dimmer
• 32 V trigger device for oscillator circuit
• Start up triggering in lighting ballast for CFL, TL or LED lamps
Description
Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can
be used in conjunction with triacs for simplified gate control circuits or as a starting
element in fluorescent lamp ballasts.
The surface mount SOT23-3L package allows compact, SMD based designs for
automated manufacturing.
Product status link
DB3
DB4
SMDB3
Product summary
Part number
VBO
SMDB3
28 - 36 V
DB3
28 - 36 V
DB4
35 - 45 V
DS2125 - Rev 3 - December 2018
For further information contact your local STMicroelectronics sales office.
www.st.com



STMicroelectronics SMDB3
DB3, DB4, SMDB3
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol
Parameter
Value
ITRM
Tstg
Tj
Repetitive peak on-state current, tp = 20 µs, F = 120 Hz
Storage junction temperature range
Operating junction temperature range
SMDB3
DB3 / DB4
1.00
2.00
-40 to +125
-40 to +125
Unit
A
A
°C
°C
Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol Parameter
Test conditions
VBO Breakover voltage (1)
C = 10 nF (2)
I VBO1 - VBO2 I Breakover voltage symmetry C = 10 nF(2)
Δ V Dynamic breakover voltage (1) VBO and VF at 10 mA
VO Output voltage (1)
See Figure 2. Test circuit, (R = 20 Ω)
IBO Breakover current (1)
C = 10 nF (2)
tr Rise time (1)
See Figure 3. Rise time measurement
IR Leakage current (1)
VR = 0.5 x VBO max
IP Peak current (1)
See Figure 2. Test circuit
1. Applicable to both forward and reverse directions.
2. Connected in parallel to the device
SMDB3 DB3 DB4 Unit
Min. 28 28 35
Typ. 32 32 40 V
Max. 36
36 45
Max. 3
3 3V
Min. 10
5 5V
Min. 10
5 5V
Max. 10
50 50 µA
Max. 0.5
2 2 µs
Max.
1
10 10 µA
Min. 1 0.30 0.30 A
DS2125 - Rev 3
page 2/11



STMicroelectronics SMDB3
DB3, DB4, SMDB3
Characteristics
Figure 1. Voltage - current characteristic curve.
+IF
10 mA
IBO
- V IB
+V
0,5 VBO
ΔV
VF VBO
- IF
Figure 2. Test circuit
10 kΩ 500 kΩ D.U.T Rs = 0
220 V
50 Hz
C = 0.1 µF
Vo
R = 20 Ω
IP
T410
DS2125 - Rev 3
page 3/11







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