V1PL45 Datasheet (data sheet) PDF





V1PL45 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V1PL45   V1PL45  

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www.vishay.com V1PL45 Vishay General Se miconductor Surface Mount Trench MOS B arrier Schottky Rectifier TMBS® eSMP Series Top View Bottom View MicroS MP (DO-219AD) Anode Cathode DESIGN S UPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTI CS IF(AV) VRRM IFSM 1.0 A 45 V 25 A VF at IF = 1.0 A (125 °C) 0.36 V TJ max. Package 150 °C MicroSMP (

V1PL45 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V1PL45   V1PL45  
DO-219AD) Circuit configuration Single FEATURES • Very low profile - typi cal height of 0.65 mm Available • I deal for automated placement • Trenc h MOS Schottky technology • Low forw ard voltage drop • Low power loss, h igh efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • M








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