(Datasheet) V1PM12 data sheet PDF





V1PM12 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V1PM12   V1PM12  

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www.vishay.com V1PM12 Vishay General Se miconductor Surface Mount Trench MOS B arrier Schottky Rectifier TMBS® eSMP Series Top View Bottom View MicroS MP (DO-219AD) Anode Cathode DESIGN S UPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTI CS IF(AV) VRRM IFSM 1.0 A 120 V 25 A VF at IF = 1.0 A (125 °C) 0.61 V TJ max. Package 175 °C MicroSMP

V1PM12 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V1PM12   V1PM12  
(DO-219AD) Circuit configuration Singl e FEATURES • Very low profile - typ ical height of 0.65 mm Available • Ideal for automated placement • Tren ch MOS Schottky technology • Low for ward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 •








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