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V2PM12 Dataheets PDF



Part Number V2PM12
Manufacturers Vishay
Logo Vishay
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet V2PM12 DatasheetV2PM12 Datasheet (PDF)

www.vishay.com V2PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2A 120 V 30 A VF at IF = 2 A (125 °C) 0.65 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.65 mm Available • Ideal for a.

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www.vishay.com V2PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2A 120 V 30 A VF at IF = 2 A (125 °C) 0.65 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection appl.


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