V2PM15 Datasheet (data sheet) PDF





V2PM15 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V2PM15   V2PM15  

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www.vishay.com V2PM15 Vishay General Se miconductor Surface Mount Trench MOS B arrier Schottky Rectifier TMBS® eSMP Series Top View Bottom View MicroS MP (DO-219AD) Anode Cathode DESIGN S UPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTI CS IF(AV) VRRM IFSM 2A 150 V 30 A VF at IF = 2 A (125 °C) 0.68 V TJ max. Package 175 °C MicroSMP (DO-2

V2PM15 Datasheet, Surface Mount Trench MOS Barrier Schottky Rectifier

V2PM15   V2PM15  
19AD) Circuit configuration Single FE ATURES • Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Trench MO S Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A utomotive ordering code: base P/NHM3 • Mater








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