P-Channel MOSFET. SUM70101EL Datasheet

SUM70101EL MOSFET. Datasheet pdf. Equivalent

SUM70101EL Datasheet
Recommendation SUM70101EL Datasheet
Part SUM70101EL
Description P-Channel MOSFET
Feature SUM70101EL; www.vishay.com SUM70101EL Vishay Siliconix P-Channel 100 V (D-S) 175 °C MOSFET TO-263 Top View .
Manufacture Vishay
Datasheet
Download SUM70101EL Datasheet




Vishay SUM70101EL
www.vishay.com
SUM70101EL
Vishay Siliconix
P-Channel 100 V (D-S) 175 °C MOSFET
TO-263
Top View
S
D
G
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -10 V
RDS(on) max. () at VGS = -4.5 V
Qg typ. (nC)
ID (A)
Configuration
-100
0.0101
0.0150
125
-120
Single
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• Maximum 175 ºC junction temperature
• Low RDS(on) minimizes power loss from conduction
• Compatible with logic-level gate driving
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Battery protection
• Motor drive control
• Load switch
S
G
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-263
SUM70101EL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current d
(TJ = 175 °C)
Pulsed drain current (100 μs)
Avalanche current
Single pulse avalanche energy a
Power dissipation
Operating junction and storage temperature range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C c
TC = 125 °C b
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-100
± 20
-120
-78
-240
-75
281
375
125
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case
Notes
a. Duty cycle 1 %
b. When mounted on 1" square PCB (FR4 material)
c. See SOA curve for voltage derating
d. Limited by package
PCB mount b
SYMBOL
RthJA
RthJC
TYPICAL
40
0.4
UNIT
°C/W
S17-0257-Rev. A, 20-Feb-17
1
Document Number: 77605
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SUM70101EL
www.vishay.com
SUM70101EL
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VDS = -100 V, VGS = 0 V
VDS = -100 V, VGS = 0 V, TJ = 125 °C
VDS = -100 V, VGS = 0 V, TJ = 175 °C
VDS -5 V, VGS = -10 V
VGS = -10 V, ID = -30 A
VGS = -4.5 V, ID = -20 A
VDS = -15 V, ID = -25 A
-100
-1.5
-
-
-
-
-120
-
-
-
-
-
-
-
-
-
-
0.0081
0.0114
60
-
-2.5
± 100
-1
-50
-250
-
0.0101
0.0150
-
V
nA
μA
A
S
Input capacitance
Ciss
Output capacitance
Coss
VGS = 0 V, VDS = -50 V, f = 1 MHz
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs VDS = -50 V, VGS = -10 V, ID = -110 A
Gate-drain charge c
Qgd
Gate resistance
Rg f = 1 MHz
Turn-on delay time c
td(on)
Rise time c
Turn-off delay time c
tr
td(off)
VDD = -50 V, RL = 0.71
ID -70 A, VGEN = -10 V, Rg = 1
Fall time c
tf
Drain-Source Body Diode Characteristics (TC = 25 °C b)
Continuous current
IS
Pulsed current
ISM
Forward voltage a
VSD IF = -85 A, VGS = 0 V
Reverse recovery time
trr
Peak reverse recovery charge
IRM(REC)
IF = -85 A, dI/dt = 100 A/μs
Reverse recovery charge
Qrr
-
-
-
-
-
-
1.3
-
-
-
-
-
-
-
-
-
-
7000
2180
170
125
29
30
6.5
20
40
110
40
-
-
-1
110
-7
0.38
-
-
-
190
-
-
13
30
60
200
60
-110
-240
-1.5
170
-11
0.57
pF
nC
ns
A
V
ns
A
μC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0257-Rev. A, 20-Feb-17
2
Document Number: 77605
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SUM70101EL
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
160
VGS = 10 V thru 5 V
128
120
96
SUM70101EL
Vishay Siliconix
96 72
64 VGS = 4 V 48 TC = 25 °C
32
VGS = 3 V
0
0 3 6 9 12 15
VDS - Drain-to-Source Voltage (V)
Output Characteristics
24
TC = 125 °C
0
02
TC = - 55 °C
468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
100
80
60
40
20
0
0
TC = 25 °C
TC = - 55 °C
TC = 125 °C
7 14 21 28
ID - Drain Current (A)
Transconductance
35
0.030
0.024
0.018
0.012
0.006
VGS = 4.5 V
VGS = 10 V
0.000
0
20 40 60 80 100
ID - Drain Current (A)
On-Resistance vs. Drain Current
120
12 000
9600
7200
Ciss
4800
2400
Crss
Coss
0
0 20 40 60 80
VDS - Drain-to-Source Voltage (V)
Capacitance
100
10
8
ID = 70 A
VDS = 50 V
6
4
2
0
0 30 60 90 120 150
Qg - Total Gate Charge (nC)
Gate Charge
S17-0257-Rev. A, 20-Feb-17
3
Document Number: 77605
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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