V20100S-E3 Datasheet (data sheet) PDF





V20100S-E3 Datasheet, High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3   V20100S-E3  

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V20100S-E3, VF20100S-E3, VB20100S-E3, VI 20100S-E3 www.vishay.com Vishay Gener al Semiconductor High Voltage Trench M OS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TM BS ® ITO-220AB V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20100S 123 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100S NC K A HEATS INK DESIGN SUPPORT TOOLS VI2

V20100S-E3 Datasheet, High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3   V20100S-E3  
0100S PIN 1 3 2 1 PIN 2 PIN 3 K clic k logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 0 A 100 V 250 A 0.69 V 150 °C TO-220AB , ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Single FEATUR ES • Trench MOS Schottky technology Low forward voltage drop, low power losses • High efficiency operatio








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