Schottky Rectifier. VB20100S-E3 Datasheet

VB20100S-E3 Rectifier. Datasheet pdf. Equivalent

VB20100S-E3 Datasheet
Recommendation VB20100S-E3 Datasheet
Part VB20100S-E3
Description High Voltage Trench MOS Barrier Schottky Rectifier
Feature VB20100S-E3; V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor Hig.
Manufacture Vishay
Datasheet
Download VB20100S-E3 Datasheet




Vishay VB20100S-E3
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.446 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF20100S
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20100S
NC K
A HEATSINK
DESIGN SUPPORT TOOLS
VI20100S
PIN 1
3
2
1
PIN 2
PIN 3
K
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
20 A
100 V
250 A
0.69 V
150 °C
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100S VF20100S VB20100S VI20100S UNIT
Max. repetitive peak reverse voltage
VRRM 100 V
Max. average forward rectified current (fig. 1)
IF(AV)
20 A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
250 A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
EAS
IRRM
dV/dt
VAC
TJ, TSTG
210
1.0
10 000
1500
-40 to +150
mJ
A
V/μs
V
°C
Revision: 18-Jun-2018
1 Document Number: 88975
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB20100S-E3
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
Reverse current
IR = 10 mA
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
105 (min.)
0.51
0.60
0.79
0.45
0.53
0.69
17
7
70
14
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.90
-
-
0.76
-
-
500
30
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100S
VF20100S
Typical thermal resistance
RJC
2.0
4.0
VB20100S
2.0
VI20100S
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100S-E3/4W
1.88
ITO-220AB VF20100S-E3/4W
1.75
TO-263AB
VB20100S-E3/4W
1.37
TO-263AB
VB20100S-E3/8W
1.37
TO-262AA
VI20100S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
16
VF20100S
12
VB20100S
V20100S
VI20100S
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
4 8 12 16 20
Average Forward Current (A)
24
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Jun-2018
2 Document Number: 88975
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB20100S-E3
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
1 TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction to Case
1
0.1
0.01
0.001
0.01
V(B,I)20100S
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
10
Junction to Case
VF20100S
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
Revision: 18-Jun-2018
3 Document Number: 88975
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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