level FET. BUK9606-55A Datasheet

BUK9606-55A FET. Datasheet pdf. Equivalent

BUK9606-55A Datasheet
Recommendation BUK9606-55A Datasheet
Part BUK9606-55A
Description N-channel TrenchMOS logic level FET
Feature BUK9606-55A; BUK9606-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 May 2010 Product data sheet 1. Produc.
Manufacture nexperia
Datasheet
Download BUK9606-55A Datasheet




nexperia BUK9606-55A
BUK9606-55A
N-channel TrenchMOS logic level FET
Rev. 04 — 31 May 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids



nexperia BUK9606-55A
Nexperia
BUK9606-55A
N-channel TrenchMOS logic level FET
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 5 V; Tj = 25 °C;
see Figure 3; see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 75 A; Vsup 55 V;
drain-source
RGS = 50 ; VGS = 5 V;
avalanche energy Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
[1]
Min Typ Max Unit
- - 55 V
- - 75 A
- - 300 W
- 4.8 5.8 m
- - 6.7 m
- 5.3 6.3 m
- - 1.1 J
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK9606-55A
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK9606-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 31 May 2010
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia BUK9606-55A
Nexperia
BUK9606-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
VGS = 5 V; Tj = 25 °C;
see Figure 3; see Figure 1
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
VGS = 5 V; Tj = 100 °C; see Figure 1
Tmb = 25 °C; tp 10 µs; pulsed;
see Figure 3
Tmb = 25 °C; see Figure 2
Tmb = 25 °C
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
tp 10 µs; pulsed; Tmb = 25 °C
ID = 75 A; Vsup 55 V; RGS = 50 ;
VGS = 5 V; Tj(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[1]
[2]
[2]
[1]
[2]
Min Typ Max Unit
- - 55 V
- - 55 V
-15 -
15 V
- - 154 A
- - 75 A
- - 75 A
- - 616 A
--
-55 -
-55 -
300 W
175 °C
175 °C
- - 154 A
- - 75 A
- - 616 A
- - 1.1 J
BUK9606-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 31 May 2010
© Nexperia B.V. 2017. All rights reserved
3 of 14







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