BUK9606-75B
N-channel TrenchMOS logic level FET
Rev. 4 — 20 July 2011
Product data sheet
1. Product profile
1.1 Gener...
BUK9606-75B
N-channel TrenchMOS logic level FET
Rev. 4 — 20 July 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 75 V
ID drain current
VGS = 5 V; Tmb = 25 °C;
[1] - - 75 A
see Figure 1; see Figure ...
