level FET. BUK9606-75B Datasheet

BUK9606-75B FET. Datasheet pdf. Equivalent

BUK9606-75B Datasheet
Recommendation BUK9606-75B Datasheet
Part BUK9606-75B
Description N-channel TrenchMOS logic level FET
Feature BUK9606-75B; BUK9606-75B N-channel TrenchMOS logic level FET Rev. 4 — 20 July 2011 Product data sheet 1. Produc.
Manufacture nexperia
Datasheet
Download BUK9606-75B Datasheet




nexperia BUK9606-75B
BUK9606-75B
N-channel TrenchMOS logic level FET
Rev. 4 — 20 July 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 75 V
ID drain current
VGS = 5 V; Tmb = 25 °C;
[1] - - 75 A
see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
- - 300 W
RDSon
drain-source on-state VGS = 10 V; ID = 25 A;
resistance
Tj = 25 °C
- 4.7 5.5 m
VGS = 5 V; ID = 25 A;
- 5.2 6.1 m
Tj = 25 °C;
see Figure 11; see Figure 12



nexperia BUK9606-75B
Nexperia
BUK9606-75B
N-channel TrenchMOS logic level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 75 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge
VGS = 5 V; ID = 25 A;
VDS = 60 V; Tj = 25 °C;
see Figure 13
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- - 852 mJ
- 37 - nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base;
connected to drain
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK9606-75B
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
BUK9606-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 July 2011
© Nexperia B.V. 2017. All rights reserved
2 of 13



nexperia BUK9606-75B
Nexperia
BUK9606-75B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 100 °C; VGS = 5 V; see Figure 1
Tmb = 25 °C; VGS = 5 V; see Figure 1;
see Figure 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
Tmb = 25 °C; pulsed; tp 10 µs;
see Figure 3
Tmb = 25 °C; see Figure 2
Tmb = 25 °C
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
pulsed; tp 10 µs; Tmb = 25 °C
ID = 75 A; Vsup 75 V; RGS = 50 ;
VGS = 5 V; Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
200
ID
(A)
150
100
Capped at 75 A due to package
50
03nh76
120
Pder
(%)
80
40
Min
-
-
-15
[1] -
[2] -
[1] -
-
Max Unit
75 V
75 V
15 V
75 A
153 A
75 A
612 A
- 300 W
-55 175 °C
-55 175 °C
[2] -
[1] -
-
153 A
75 A
612 A
- 852 mJ
03na19
0
25 50 75 100 125 150 175 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9606-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 July 2011
© Nexperia B.V. 2017. All rights reserved
3 of 13





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