TrenchMOS FET. BUK9606-55B Datasheet

BUK9606-55B FET. Datasheet pdf. Equivalent

BUK9606-55B Datasheet
Recommendation BUK9606-55B Datasheet
Part BUK9606-55B
Description N-channel TrenchMOS FET
Feature BUK9606-55B; BUK9606-55B N-channel TrenchMOS FET Rev. 04 — 23 July 2009 Product data sheet 1. Product profile .
Manufacture nexperia
Datasheet
Download BUK9606-55B Datasheet




nexperia BUK9606-55B
BUK9606-55B
N-channel TrenchMOS FET
Rev. 04 — 23 July 2009
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology. This product has been designed and qualified to the appropriate
AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 55 V
ID drain current
VGS = 5 V; Tmb = 25 °C; [1] - - 75 A
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 258 W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 55 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 °C; unclamped
- - 679 mJ
QGD
gate-drain charge
VGS = 5 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 14 and 15
- 22 - nC



nexperia BUK9606-55B
Nexperia
BUK9606-55B
N-channel TrenchMOS FET
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 11 and 12
VGS = 5 V; ID = 25 A;
Tj = 25 °C;
see Figure 11 and 12
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- 4.8 5.4 m
-
5.1 6
m
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
[1] It is not possible to make a connection to pin 2.
Simplified outline
[1] mb
2
13
SOT404
(D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
BUK9606-55B D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Version
SOT404
BUK9606-55B_4
Product data sheet
Rev. 04 — 23 July 2009
© Nexperia B.V. 2017. All rights reserved
2 of 13



nexperia BUK9606-55B
Nexperia
BUK9606-55B
N-channel TrenchMOS FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 5 V; see Figure 1 and 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
Tmb = 100 °C; VGS = 5 V; see Figure 1
Tmb = 25 °C; tp 10 µs; pulsed; see Figure 3
Tmb = 25 °C; see Figure 2
Tmb = 25 °C;
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 75 A; Vsup 55 V; RGS = 50 ; VGS = 5 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min Max Unit
- 55 V
- 55 V
-15 15
V
[1] -
146 A
[2] -
75 A
[2] -
75 A
- 587 A
- 258 W
-55 175 °C
-55 175 °C
[1] -
[2] -
-
146 A
75 A
587 A
- 679 mJ
150
03nh85
120
ID Pder
(A) (%)
100 80
03aa16
Capped at 75 A due to package
50
40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9606-55B_4
Product data sheet
Rev. 04 — 23 July 2009
© Nexperia B.V. 2017. All rights reserved
3 of 13







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