BUK765R2-40B

BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 3 — 22 November 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Min Typ Max Unit Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V VGS = 10 V; Tmb = 25 °C; see Figure 1; [1] - - 75 A see Figure 3 Ptot total power dissipation Static characteristics Tmb = 2...