level FET. BUK765R2-40B Datasheet

BUK765R2-40B FET. Datasheet pdf. Equivalent

BUK765R2-40B Datasheet
Recommendation BUK765R2-40B Datasheet
Part BUK765R2-40B
Description N-channel TrenchMOS standard level FET
Feature BUK765R2-40B; BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 3 — 22 November 2011 Product data sheet 1.
Manufacture nexperia
Datasheet
Download BUK765R2-40B Datasheet




nexperia BUK765R2-40B
BUK765R2-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 22 November 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Min Typ Max Unit
Tj 25 °C; Tj 175 °C
- - 40 V
VGS = 10 V; Tmb = 25 °C; see Figure 1; [1] - - 75 A
see Figure 3
Ptot total power dissipation
Static characteristics
Tmb = 25 °C; see Figure 2
- - 203 W
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
- 4.4 5.2 m
Dynamic characteristics
QGD gate-drain charge
Avalanche ruggedness
VGS = 10 V; ID = 25 A; VDS = 32 V;
Tj = 25 °C; see Figure 13
- 16 - nC
EDS(AL)S
non-repetitive drain-source ID = 75 A; Vsup 40 V; RGS = 50 ;
- - 494 mJ
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.



nexperia BUK765R2-40B
Nexperia
BUK765R2-40B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK765R2-40B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK765R2-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 November 2011
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia BUK765R2-40B
Nexperia
BUK765R2-40B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
Min
-
-
-20
[1] -
[2] -
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; pulsed; tp 10 µs; see Figure 3
Tmb = 25 °C; see Figure 2
[2] -
-
-
-55
-55
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
[1] -
[2] -
-
ID = 75 A; Vsup 40 V; RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
-
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40 V
40 V
20 V
143 A
75 A
75 A
573 A
203 W
175 °C
175 °C
143 A
75 A
573 A
494 mJ
150
ID
(A)
100
03nj26
120
Pder
(%)
80
03na19
Capped at 75 A due to package
50
40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK765R2-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 November 2011
© Nexperia B.V. 2017. All rights reserved
3 of 14







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