level FET. BUK7607-55B Datasheet

BUK7607-55B FET. Datasheet pdf. Equivalent

BUK7607-55B Datasheet
Recommendation BUK7607-55B Datasheet
Part BUK7607-55B
Description N-channel TrenchMOS standard level FET
Feature BUK7607-55B; BUK7607-55B N-channel TrenchMOS standard level FET Rev. 2 — 26 July 2011 Product data sheet 1. Pro.
Manufacture nexperia
Datasheet
Download BUK7607-55B Datasheet




nexperia BUK7607-55B
BUK7607-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 26 July 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 55 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 75 A
see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 203 W
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
- 5.8 7.1 m
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 55 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 351 mJ
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 13
- 17 - nC
[1] Continuous current is limited by package.



nexperia BUK7607-55B
Nexperia
BUK7607-55B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base;
connected to drain
[1] It is not possible to make connection to pin 2.
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7607-55B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK7607-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 July 2011
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia BUK7607-55B
Nexperia
BUK7607-55B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
Tmb = 25 °C; pulsed; tp 10 µs;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
Tmb = 25 °C
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
pulsed; tp 10 µs; Tmb = 25 °C
ID = 75 A; Vsup 55 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
Min
-
-
-20
[1] -
Max Unit
55 V
55 V
20 V
75 A
[1] -
[2] -
75 A
119 A
- 478 A
- 203 W
-55 175 °C
-55 175 °C
[2] -
[1] -
-
119 A
75 A
478 A
- 351 mJ
BUK7607-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 July 2011
© Nexperia B.V. 2017. All rights reserved
3 of 14







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