level FET. BUK768R1-40E Datasheet

BUK768R1-40E FET. Datasheet pdf. Equivalent

BUK768R1-40E Datasheet
Recommendation BUK768R1-40E Datasheet
Part BUK768R1-40E
Description N-channel TrenchMOS standard level FET
Feature BUK768R1-40E; BUK768R1-40E N-channel TrenchMOS standard level FET 28 July 2016 Product data sheet 1. General des.
Manufacture nexperia
Datasheet
Download BUK768R1-40E Datasheet




nexperia BUK768R1-40E
BUK768R1-40E
N-channel TrenchMOS standard level FET
28 July 2016
Product data sheet
1. General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
2. Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 20 A; VDS = 32 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 40 V
[1] - - 75 A
- - 96 W
- 5.6 7.2 mΩ
- 7.4 - nC



nexperia BUK768R1-40E
Nexperia
BUK768R1-40E
N-channel TrenchMOS standard level FET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
2
13
D2PAK (SOT404)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK768R1-40E
D2PAK
Description
plastic single-ended surface-mounted package
(D2PAK); 3 leads (one lead cropped)
Version
SOT404
7. Marking
Table 4. Marking codes
Type number
BUK768R1-40E
Marking code
BUK768R1-40E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
Tmb = 100 °C; VGS = 10 V; Fig. 2
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
Tstg storage temperature
Tj junction temperature
BUK768R1-40E
All information provided in this document is subject to legal disclaimers.
Product data sheet
28 July 2016
[1]
[1]
Min Max Unit
- 40 V
- 40 V
-20 20
V
- 96 W
- 75 A
- 59 A
- 335 A
-55 175 °C
-55 175 °C
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia BUK768R1-40E
Nexperia
BUK768R1-40E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1] -
-
75 A
335 A
ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[2][3]
-
43.8 mJ
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
120
Pder
(%)
80
03aa16
100
ID
(A)
75
(1)
003aah165
50
40
25
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 50 100 150 Tmb(°C) 200
(1) Capped at 75A due to package
Fig. 2. Continuous drain current as a function of
mounting base temperature
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 July 2016
© Nexperia B.V. 2017. All rights reserved
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