level FET. BUK9Y07-30B Datasheet

BUK9Y07-30B FET. Datasheet pdf. Equivalent

BUK9Y07-30B Datasheet
Recommendation BUK9Y07-30B Datasheet
Part BUK9Y07-30B
Description N-channel TrenchMOS standard level FET
Feature BUK9Y07-30B; BUK9Y07-30B N-channel TrenchMOS logic level FET Rev. 03 — 7 April 2010 Product data sheet 1. Produ.
Manufacture nexperia
Datasheet
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nexperia BUK9Y07-30B
BUK9Y07-30B
N-channel TrenchMOS logic level FET
Rev. 03 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
VGS = 10 V; ID = 25 A;
Tj = 25 °C
Min Typ Max Unit
- - 30 V
[1] - - 75 A
- - 105 W
- 4.9 7 m
- 4 6 m



nexperia BUK9Y07-30B
Nexperia
BUK9Y07-30B
N-channel TrenchMOS logic level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 30 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge VGS = 5 V; ID = 25 A;
VDS = 24 V; see Figure 14
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- - 198 mJ
- 12.4 - nC
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbl798 S1 S2 S3
Table 3. Ordering information
Type number
Package
Name
BUK9Y07-30B
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
BUK9Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia BUK9Y07-30B
Nexperia
BUK9Y07-30B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 5 V; see Figure 1;
see Figure 4
[1]
Min Typ Max Unit
- - 30 V
- - 30 V
-15 -
15 V
- - 75 A
Tmb = 100 °C; VGS = 5 V; see Figure 1
- - 63 A
IDM
peak drain current
Tmb = 25 °C; tp 10 µs; pulsed;
see Figure 4
- - 356 A
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
--
-55 -
-55 -
105 W
175 °C
175 °C
IS
source current
Tmb = 25 °C
[1] - - 75 A
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
- - 356 A
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 75 A; Vsup 30 V; RGS = 50 ;
VGS = 5 V; Tj(init) = 25 °C; unclamped
- - 198 mJ
EDS(AL)R
repetitive drain-source see Figure 3
avalanche energy
[2][3][4][ - - - J
5]
[1] Continuous current is limited by package.
[2] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
BUK9Y07-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
© Nexperia B.V. 2017. All rights reserved
3 of 14







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