level FET. BUK7Y20-30B Datasheet

BUK7Y20-30B FET. Datasheet pdf. Equivalent

BUK7Y20-30B Datasheet
Recommendation BUK7Y20-30B Datasheet
Part BUK7Y20-30B
Description N-channel TrenchMOS standard level FET
Feature BUK7Y20-30B; BUK7Y20-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Pr.
Manufacture nexperia
Datasheet
Download BUK7Y20-30B Datasheet




nexperia BUK7Y20-30B
BUK7Y20-30B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use
in automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Loads
Automotive systems
General purpose power switch
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 20 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 39.5 A; Vsup 30 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 20 A; VDS = 24 V;
VGS = 10 V; see Figure 14
Min Typ Max Unit
- - 30 V
- - 39.5 A
- - 59 W
- 16 20 m
- - 45 mJ
- 3.84 - nC



nexperia BUK7Y20-30B
Nexperia
BUK7Y20-30B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7Y20-30B
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
BUK7Y20-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia BUK7Y20-30B
Nexperia
BUK7Y20-30B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 4
Min Typ Max Unit
- - 30 V
- - 30 V
-20 -
20 V
- - 39.5 A
Tmb = 100 °C; VGS = 10 V; see Figure 1
- - 28 A
IDM
peak drain current
Tmb = 25 °C; tp 10 µs; pulsed;
see Figure 4
- - 158 A
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
--
-55 -
-55 -
59 W
175 °C
175 °C
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Tmb = 25 °C
tp 10 µs; pulsed; Tmb = 25 °C
ID = 39.5 A; Vsup 30 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
- - 39.5 A
- - 158 A
- - 45 mJ
EDS(AL)R
repetitive drain-source see Figure 3
avalanche energy
[1][2][3] - - - J
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
BUK7Y20-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© Nexperia B.V. 2017. All rights reserved
3 of 14







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