level FET. BUK9615-100E Datasheet

BUK9615-100E FET. Datasheet pdf. Equivalent

BUK9615-100E Datasheet
Recommendation BUK9615-100E Datasheet
Part BUK9615-100E
Description N-channel TrenchMOS standard level FET
Feature BUK9615-100E; BUK9615-100E N-channel TrenchMOS logic level FET 26 May 2016 Product data sheet 1. General descrip.
Manufacture nexperia
Datasheet
Download BUK9615-100E Datasheet




nexperia BUK9615-100E
BUK9615-100E
N-channel TrenchMOS logic level FET
26 May 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
2. Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
3. Applications
12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 15 A; VDS = 80 V;
Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 66 A
- - 182 W
-
12.5 15
- 23 - nC



nexperia BUK9615-100E
Nexperia
BUK9615-100E
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
2
13
D2PAK (SOT404)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9615-100E
D2PAK
Description
plastic single-ended surface-mounted package
(D2PAK); 3 leads (one lead cropped)
Version
SOT404
7. Marking
Table 4. Marking codes
Type number
BUK9615-100E
Marking code
BUK9615-100E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
Tj ≤ 175 °C; Pulsed
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
Tmb = 25 °C; VGS = 5 V; Fig. 2
Tmb = 100 °C; VGS = 5 V; Fig. 2
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
Tstg storage temperature
BUK9615-100E
All information provided in this document is subject to legal disclaimers.
Product data sheet
26 May 2016
[1][2]
Min Max Unit
- 100 V
- 100 V
-10 10
V
-15 15
V
- 182 W
- 66 A
- 47 A
- 266 A
-55 175 °C
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia BUK9615-100E
Nexperia
BUK9615-100E
N-channel TrenchMOS logic level FET
Symbol
Parameter
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Min Max Unit
-55 175 °C
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
-
ID = 66 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[3][4]
-
66 A
266 A
132 mJ
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm
[2] Significantly longer life times are achieved by lowering Tj and or VGS
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Refer to application note AN10273 for further information.
120
Pder
(%)
80
03aa16
80
ID
(A)
60
003aah975
40
40
20
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 50 100 150 Tmb(°C)200
Fig. 2. Continuous drain current as a function of
mounting base temperature
BUK9615-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 May 2016
© Nexperia B.V. 2017. All rights reserved
3 / 13







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