level FET. BUK661R9-40C Datasheet

BUK661R9-40C FET. Datasheet pdf. Equivalent

BUK661R9-40C Datasheet
Recommendation BUK661R9-40C Datasheet
Part BUK661R9-40C
Description N-channel TrenchMOS intermediate level FET
Feature BUK661R9-40C; BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 18 August 2010 Product data shee.
Manufacture nexperia
Datasheet
Download BUK661R9-40C Datasheet




nexperia BUK661R9-40C
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 18 August 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for intermediate level gate
drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 40 V
[1] - - 120 A
- - 306 W
- 1.6 1.9 m



nexperia BUK661R9-40C
Nexperia
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 120 A; Vsup 40 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 25 A; VDS = 32 V;
VGS = 10 V; see Figure 13;
see Figure 14
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- - 1.02 J
- 72 - nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D Drain
S source
D mounting base; connected to
drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK661R9-40C
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK661R9-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia BUK661R9-40C
Nexperia
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Parameter
drain-source voltage
gate-source voltage
Conditions
Tj 25 °C; Tj 175 °C
Pulsed
DC
[1]
[2]
ID drain current
IDM peak drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; tp 10 µs; pulsed;
see Figure 3
[3]
[3]
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
EDS(AL)R
repetitive drain-source
avalanche energy
Tmb = 25 °C
tp 10 µs; pulsed; Tmb = 25 °C
[3]
ID = 120 A; Vsup 40 V; RGS = 50 ;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[4][5][6]
Min
-
-20
-16
-
-
-
-
-55
-55
-
-
-
-
[1] Accumulated pulse duration not to exceed 5mins.
[2] -16V accumulated duration not to exceed 168 hrs
[3] Continuous current is limited by package.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Max
40
20
16
120
120
1107
Unit
V
V
V
A
A
A
306 W
175 °C
175 °C
120 A
1107 A
1.02 J
-J
BUK661R9-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
© Nexperia B.V. 2017. All rights reserved
3 of 15







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)