level MOSFET. PSMN4R5-40PS Datasheet

PSMN4R5-40PS MOSFET. Datasheet pdf. Equivalent

PSMN4R5-40PS Datasheet
Recommendation PSMN4R5-40PS Datasheet
Part PSMN4R5-40PS
Description N-channel standard level MOSFET
Feature PSMN4R5-40PS; PSMN4R5-40PS N-channel 40 V 4.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data shee.
Manufacture nexperia
Datasheet
Download PSMN4R5-40PS Datasheet




nexperia PSMN4R5-40PS
PSMN4R5-40PS
N-channel 40 V 4.6 mstandard level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC convertors
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 40 V
- - 100 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 148 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 20 V; see Figure 14;
see Figure 15
- 8.8 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13;
[1] -
3.9 4.6 m
[1] Measured 3 mm from package.



nexperia PSMN4R5-40PS
Nexperia
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PSMN4R5-40PS
N-channel 40 V 4.6 mstandard level MOSFET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78
(TO-220AB; SC-46)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN4R5-40PS TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tmb = 25 °C
tp 10 µs; pulsed; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup 40 V;
unclamped; RGS = 50
PSMN4R5-40PS_2
Product data sheet
Rev. 02 — 25 June 2009
Min Max Unit
- 40 V
- 40 V
-20 20
V
- 96 A
- 100 A
- 545 A
- 148 W
-55 175 °C
-55 175 °C
- 100 A
- 545 A
- 152 mJ
© Nexperia B.V. 2017. All rights reserved
2 of 13



nexperia PSMN4R5-40PS
Nexperia
PSMN4R5-40PS
N-channel 40 V 4.6 mstandard level MOSFET
150
ID
(A)
100
(1)
50
003aad008
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID Limit RDSon = VDS / ID
(A)
102
(1)
10
1
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aad297
DC
10
10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN4R5-40PS_2
Product data sheet
Rev. 02 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
3 of 13







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