level MOSFET. PSMN4R5-40BS Datasheet

PSMN4R5-40BS MOSFET. Datasheet pdf. Equivalent

PSMN4R5-40BS Datasheet
Recommendation PSMN4R5-40BS Datasheet
Part PSMN4R5-40BS
Description N-channel standard level MOSFET
Feature PSMN4R5-40BS; PSMN4R5-40BS N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product .
Manufacture nexperia
Datasheet
Download PSMN4R5-40BS Datasheet




nexperia PSMN4R5-40BS
PSMN4R5-40BS
N-channel 40 V 4.5 mstandard level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1] Continuous current is limited by package
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 13; see Figure 5
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 5
VGS = 10 V; ID = 25 A; VDS = 20 V;
see Figure 14; see Figure 15
VGS = 10 V; ID = 0 A; VDS = 0 V
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 40 V; unclamped; RGS = 50
Min
-
[1] -
-
-55
-
-
-
-
-
Typ Max Unit
- 40 V
- 100 A
- 148 W
- 175 °C
5.5 6.5
3.79 4.5
m
m
8.8 -
35 -
nC
nC
- 152 mJ



nexperia PSMN4R5-40BS
Nexperia
PSMN4R5-40BS
N-channel 40 V 4.5 mstandard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN4R5-40BS
D2PAK
4. Marking
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Marking codes
Type number
PSMN4R5-40BS
Marking code
PSMN4R5-40BS
PSMN4R5-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN4R5-40BS
Nexperia
PSMN4R5-40BS
N-channel 40 V 4.5 mstandard level MOSFET in D2PAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
[1]
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1]
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
[1]
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 40 V; unclamped; RGS = 50
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
[1] Continuous current is limited by package
Max Unit
40 V
40 V
20 V
96 A
100 A
545 A
148 W
175 °C
175 °C
260 °C
100 A
545 A
152 mJ
150
ID
(A)
100
(1)
003aad008
120
Pder
(%)
80
03aa16
50 40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R5-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© Nexperia B.V. 2017. All rights reserved
3 of 15







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