N-channel MOSFET. PSMN4R5-30YLC Datasheet

PSMN4R5-30YLC MOSFET. Datasheet pdf. Equivalent

PSMN4R5-30YLC Datasheet
Recommendation PSMN4R5-30YLC Datasheet
Part PSMN4R5-30YLC
Description N-channel MOSFET
Feature PSMN4R5-30YLC; PSMN4R5-30YLC N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 3 .
Manufacture nexperia
Datasheet
Download PSMN4R5-30YLC Datasheet




nexperia PSMN4R5-30YLC
PSMN4R5-30YLC
N-channel 30 V 4.8 mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 3 — 5 July 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Power OR-ing
Server power supplies
Sync rectifier
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 20 A;
Tj = 25 °C; see Figure 12
VGS = 10 V; ID = 20 A;
Tj = 25 °C; see Figure 12
Min Typ Max Unit
- - 30 V
- - 84 A
--
-55 -
61 W
175 °C
- 5.1 6.1 m
- 4 4.8 m



nexperia PSMN4R5-30YLC
Nexperia
PSMN4R5-30YLC
N-channel 30 V 4.8 mlogic level MOSFET in LFPAK using NextPower
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 20 A;
VDS = 15 V; see Figure 14;
see Figure 15
QG(tot)
total gate charge
VGS = 4.5 V; ID = 20 A;
VDS = 15 V; see Figure 14;
see Figure 15
Min Typ Max Unit
- 2.85 - nC
- 9.6 - nC
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK;
Power-SO8)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN4R5-30YLC
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
4. Marking
Version
SOT669
Table 4. Marking codes
Type number
PSMN4R5-30YLC
[1] % = placeholder for manufacturing site code.
Marking code[1]
4C530L
PSMN4R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 July 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN4R5-30YLC
Nexperia
PSMN4R5-30YLC
N-channel 30 V 4.8 mlogic level MOSFET in LFPAK using NextPower
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 84 A;
Vsup 30 V; RGS = 50 ; unclamped;
see Figure 3
Min Max Unit
- 30 V
- 30 V
-20 20 V
- 60 A
- 84 A
- 334 A
- 61 W
-55 175 °C
-55 175 °C
- 260 °C
270 -
V
- 55 A
- 334 A
- 14.5 mJ
PSMN4R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 July 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15







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