N-channel MOSFET. PSMN3R2-30YLC Datasheet

PSMN3R2-30YLC MOSFET. Datasheet pdf. Equivalent

PSMN3R2-30YLC Datasheet
Recommendation PSMN3R2-30YLC Datasheet
Part PSMN3R2-30YLC
Description N-channel MOSFET
Feature PSMN3R2-30YLC; PSMN3R2-30YLC N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 .
Manufacture nexperia
Datasheet
Download PSMN3R2-30YLC Datasheet




nexperia PSMN3R2-30YLC
PSMN3R2-30YLC
N-channel 30 V 3.5mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 01 — 2 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High reliability Power SO8 package,
qualified to 175°C
„ Low parasitic inductance and
resistance
„ Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
„ Ultra low QG, QGD, and QOSS for
high system efficiencies at low and
high loads
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Power OR-ing
„ Server power supplies
„ Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon drain-source on-state
resistance
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Min Typ Max Unit
- - 30 V
[1] - - 100 A
Tmb = 25 °C; see Figure 2
--
-55 -
92 W
175 °C
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C; see Figure 12
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12
- 3.75 4.55 m
- 2.9 3.5 m



nexperia PSMN3R2-30YLC
Nexperia
PSMN3R2-30YLC
N-channel 30 V 3.5mlogic level MOSFET in LFPAK using NextPower
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD gate-drain charge
VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
QG(tot) total gate charge
VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- 4.1 - nC
- 14.2 - nC
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
Simplified outline
mb
1234
SOT669 (LFPAK;
Power-SO8)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN3R2-30YLC
LFPAK; Power-SO8
Description
Version
plastic single-ended surface-mounted package; 4 leads SOT669
4. Marking
Table 4. Marking codes
Type number
PSMN3R2-30YLC
[1] % = placeholder for manufacturing site code
Marking code[1]
3C230L
PSMN3R2-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 May 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN3R2-30YLC
Nexperia
PSMN3R2-30YLC
N-channel 30 V 3.5mlogic level MOSFET in LFPAK using NextPower
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 30 V; RGS = 50 ; unclamped;
see Figure 3
Min
-
-
-20
[1] -
-
-
-
-55
-55
-
360
-
-
-
[1] Continuous current is limited by package.
Max Unit
30 V
30 V
20 V
100 A
85 A
482 A
92 W
175 °C
175 °C
260 °C
-V
83 A
482 A
39 mJ
150
ID
(A)
120
90
(1)
003a a f779
120
Pder
(%)
80
03na19
60
40
30
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R2-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 May 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15







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