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PSMN3R2-40YLD

nexperia

N-channel MOSFET

PSMN3R2-40YLD 2 January 2019 Objective data sheet 1. Quick reference data Table 1. Quick reference data Symbol Para...


nexperia

PSMN3R2-40YLD

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PSMN3R2-40YLD 2 January 2019 Objective data sheet 1. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGD gate-drain charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 4.5 V; ID = 25 A; Tj = 25 °C ID = 25 A; VDS = 20 V; VGS = 4.5 V Min Typ Max Unit - - 40 V [1] - - 120 A - - 115 W -55 - 175 °C - 2.6 3.1 mΩ - 3.1 3.9 mΩ - [tbd] [tbd] nC - 4.5 9 nC [1] 120A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source mb 2 S source...




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