N-channel MOSFET. PSMN3R2-40YLD Datasheet

PSMN3R2-40YLD MOSFET. Datasheet pdf. Equivalent

PSMN3R2-40YLD Datasheet
Recommendation PSMN3R2-40YLD Datasheet
Part PSMN3R2-40YLD
Description N-channel MOSFET
Feature PSMN3R2-40YLD; PSMN3R2-40YLD 2 January 2019 Objective data sheet 1. Quick reference data Table 1. Quick referenc.
Manufacture nexperia
Datasheet
Download PSMN3R2-40YLD Datasheet




nexperia PSMN3R2-40YLD
PSMN3R2-40YLD
2 January 2019
Objective data sheet
1. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGD
gate-drain charge
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
ID = 25 A; VDS = 20 V; VGS = 4.5 V
Min Typ Max Unit
- - 40 V
[1] - - 120 A
- - 115 W
-55 -
175 °C
- 2.6 3.1 mΩ
- 3.1 3.9 mΩ
- [tbd] [tbd] nC
-
4.5 9
nC
[1] 120A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN3R2-40YLD
LFPAK56;
Power-SO8
Description
plastic, single-ended surface-mounted package; 4 terminals
Version
SOT669



nexperia PSMN3R2-40YLD
Nexperia
PSMN3R2-40YLD
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDSM
drain-source voltage
peak drain-source
voltage
25 °C ≤ Tj ≤ 175 °C
tp = 20 ns; f = 500 kHz; EDS(AL) = 200 nJ;
pulsed
VDGR
VGS
Ptot
ID
IDM
Tstg
Tj
Tsld(M)
drain-gate voltage
gate-source voltage
total power dissipation
drain current
peak drain current
storage temperature
junction temperature
peak soldering
temperature
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tj ≤ 175 °C
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 39.7 A; Vsup ≤ 40 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 15 µs
ID = 25 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 376 µs
IAS non-repetitive avalanche Vsup = 40 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω
[1]
[2]
[2]
Min Max Unit
- 40 V
- 45 V
- 40 V
-20 20
V
- 115 W
- 120 A
- 98 A
- 554 A
-55 175 °C
-55 175 °C
- 260 °C
- 96 A
- 554 A
- 145 mJ
- 245 mJ
- 120 A
[1] 120A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Protected by 100% test
PSMN3R2-40YLD
Objective data sheet
All information provided in this document is subject to legal disclaimers.
2 January 2019
© Nexperia B.V. 2019. All rights reserved
2 / 10



nexperia PSMN3R2-40YLD
Nexperia
PSMN3R2-40YLD
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
150
ID
(A)
125
100
(1)
aaa-029505
75
50
25
0
0 25 50 75 100 125 150 175 200
Tmb (°C)
VGS ≥ 10 V
(1) 120A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 2. Continuous drain current as a function of
mounting base temperature
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-mb)
thermal resistance from Fig. 3
junction to mounting
base
Rth(j-a)
thermal resistance from Fig. 4
junction to ambient
Fig. 5
Min Typ Max Unit
- 1.18 1.3 K/W
- 42 - K/W
- 85 - K/W
10
Zth(j-mb)
(K/W)
aaa-026231
1
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single shot
P
tp
δ= T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp
T
tp (s)
t
1
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN3R2-40YLD
Objective data sheet
All information provided in this document is subject to legal disclaimers.
2 January 2019
© Nexperia B.V. 2019. All rights reserved
3 / 10







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